1. High-efficiency ultraviolet light-emitting diodes using quaternary InAlGaN;Hirayama;J Appl Phys,2005
2. Development of 300 nm band high-intensity ultraviolet (UV) LEDs using quaternary InAlGaN;Hirayama;Oyobuturi,2002
3. UV intense emission from nitride semiconductors and its application to 300-nm-band emitting devices;Hirayama;Optronics,2000
4. Growth of (In) AlGaN compound semiconductors and their application to 300-nm-band high-intensity UV-LEDs;Hirayama;The Review of Laser Engineering,2002
5. Short wavelength and high-efficiency operation of deep UV LED using quaternary InAlGaN;Hirayama;The Review of Laser Engineering, Special Issue on Present Status and Future Prospect of Ultraviolet LEDs and LDs Based on Nitride Semiconductors,2004