Growth of (In)AlGaN Compound Semiconductors and their Application to 300-nm-Band High-Intensity UV-LEDs-Reference-Cited by-同舟云学术

Growth of (In)AlGaN Compound Semiconductors and their Application to 300-nm-Band High-Intensity UV-LEDs

Published:2002 Issue:6 Volume:30 Page:308-314
ISSN:0387-0200
Container-title:The Review of Laser Engineering
language:en
Short-container-title:The Review of Laser Engineering

Author:

HIRAYAMA Hideki¹,AOYAGI Yoshinobu¹

Affiliation:

1. RIKEN(The Institute of Physical and Chemical Research)

Publisher

Laser Society of Japan

Link

https://www.jstage.jst.go.jp/article/lsj/30/6/30_6_308/_pdf

Reference20 articles.

1. 2) S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku: Jpn. J. Appl. Phys. 36 (1997) L1059-L1061.

2. 3) S. Goto, T. Tojyo, Y. Yabuki, T. Hino, S. Ansai, H. Yamanaka, Y. Moriya, Y. Ito, Y. Hamaguchi, S. Uchida, and M. Ikeda: 28^th International Symposium on Compound Semiconductors (ISCS2001) Komaba Oct. 1-4 (2001) TuA-4.

3. 4) H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata, and Y. Aoyagi: The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICOMVPE-X'2000) Sapporo, June 5-9 (2000) Fr-A8.

4. 5) H. Hirayama, A. Kinoshita, M. Ainoya, T. Yamabi, T. Yamanaka, A. Hirata, and Y. Aoyagi: to be published in phys. stat. sol. (a) (2001).

5. 7) H. Hirayama, A. Kinoshita, A. Hirata, and Y. Aoyagi: GaN and Related Alloys, Mater. Res. Soc. 639 (2001) G2.8.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perspectives on UVC LED: Its Progress and Application;Photonics;2021-05-31

2. Development of 230-270 nm AlGaN-based deep-UV LEDs;Electronics and Communications in Japan;2010-03

3. Development of 230-270 nm AlGaN-Based Deep UV LEDs;IEEJ Transactions on Electronics, Information and Systems;2008

4. High-efficiency UV LEDs using quaternary InAlGaN;Electrical Engineering in Japan;2006

5. High-Efficiency UV LEDs using Quaternary InAlGaN;IEEJ Transactions on Electronics, Information and Systems;2005