Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122786
Reference10 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Time‐resolved photoluminescence studies of InGaN epilayers
3. Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy
4. Recombination dynamics in InGaN quantum wells
5. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
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