Micro-photoluminescence to investigate lateral diffusion of charge carriers in InGaN/GaN MQWs-Reference-Cited by-同舟云学术

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Micro-photoluminescence to investigate lateral diffusion of charge carriers in InGaN/GaN MQWs

Published:2022-03-05 Issue: Volume: Page:
ISSN:
Container-title:Gallium Nitride Materials and Devices XVII
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Author:

Becht Conny,Binder Michael,Galler Bastian,Off Jürgen,Tauer Maximilian,Gomez-Iglesias Alvaro,Wang Heng,Strassburg Martin,Schwarz Ulrich T.

Publisher

SPIE

Reference12 articles.

1. Background story of the invention of efficient InGaN blue-light-emitting diodes (nobel lecture);Nakamura,2015

2. Threading dislocation density effect on the electrical and optical properties of InGaN light-emitting diodes

3. Microstructural evolution in H ion induced splitting of freestanding GaN

4. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

5. Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis;IEEE Transactions on Electron Devices;2024-03

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