Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818761
Reference23 articles.
1. White light emitting diodes with super-high luminous efficacy
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3. Efficiency droop in nitride-based light-emitting diodes
4. Auger recombination in InGaN measured by photoluminescence
5. Droop in III-nitrides: Comparison of bulk and injection contributions
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1. Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution;Journal of Applied Physics;2024-01-16
2. Carrier density dependent Auger recombination in c-plane (In,Ga)N/GaN quantum wells: insights from atomistic calculations;Journal of Physics D: Applied Physics;2023-12-22
3. Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells;ACS Photonics;2023-07-19
4. Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence;Applied Physics Letters;2023-05-22
5. Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence;physica status solidi (b);2023-03-30
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