Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence-Reference-Cited by-同舟云学术

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

Published:2013-08-12 Issue:7 Volume:103 Page:071108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Binder M.,Nirschl A.,Zeisel R.,Hager T.,Lugauer H.-J.,Sabathil M.,Bougeard D.,Wagner J.,Galler B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4818761

Reference23 articles.

1. White light emitting diodes with super-high luminous efficacy

2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

3. Efficiency droop in nitride-based light-emitting diodes

4. Auger recombination in InGaN measured by photoluminescence

5. Droop in III-nitrides: Comparison of bulk and injection contributions

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