Efficiency droop in zincblende InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

Efficiency droop in zincblende InGaN/GaN quantum wells

Published:2024 Issue:29 Volume:16 Page:13953-13961
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Dyer D.¹^ORCID,Church S. A.¹,Ahumada-Lazo R.¹²^ORCID,Kappers M. J.³,Halsall M. P.⁴,Parkinson P.¹^ORCID,Wallis D. J.³⁵,Oliver R. A.³,Binks D. J.¹^ORCID

Affiliation:

1. Department of Physics and Astronomy & Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK

2. Tecnologico de Monterrey, School of Engineering and Sciences, Ave. Eugenio Garza Sada 2501, Monterrey, N.L., 64849, Mexico

3. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK

4. Department of Electrical and Electronic Engineering & Photon Science Institute, University of Manchester, Manchester, M13 9PL, UK

5. Centre for High frequency Engineering, Cardiff University, Cardiff, CF24 3AA, UK

Abstract

Cubic zincblende InGaN/GaN quantum wells are free of the electric fields that reduce recombination efficiency in hexagonal wurtzite wells.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D4NR00812J

Reference38 articles.

1. White light emitting diodes with super-high luminous efficacy

2. Efficiency droop in light-emitting diodes: Challenges and countermeasures

3. Efficiency droop in nitride-based light-emitting diodes

4. Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence

5. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2