Droop in III-nitrides: Comparison of bulk and injection contributions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3515851
Reference5 articles.
1. Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
2. Auger recombination in InGaN measured by photoluminescence
3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
4. Defect related issues in the “current roll-off” in InGaN based light emitting diodes
5. On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
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