Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing-Reference-Cited by-同舟云学术

Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing

Published:2021-09 Issue: Volume:570 Page:126207
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Xing Kun^ORCID,Cheng Xueying,Wang Liancheng,Chen Shirong,Zhang Yun,Liang Huaguo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

3. AlGaN photonics: recent advances in materials and ultraviolet devices

4. Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells

5. Giant electric fields in unstrained GaN single quantum wells

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