A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates-Reference-Cited by-同舟云学术

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

Published:2016-11-10 Issue:1 Volume:17 Page:736-743
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Kundys Dmytro¹,Sutherland Danny¹,Davies Matthew J.¹,Oehler Fabrice²,Griffiths James²,Dawson Philip¹,Kappers Menno J.²,Humphreys Colin J.²,Schulz Stefan³,Tang Fengzai²,Oliver Rachel A.²

Affiliation:

1. School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, UK

2. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK

3. Photonics Theory Group, Tyndall National Institute, Cork, Ireland

Funder

Engineering and Physical Sciences Research Council

Science Foundation Ireland

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/14686996.2016.1244474

Reference35 articles.

1. Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes

2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

3. Electronic and optical properties of nonpolara-plane GaN quantum wells

4. Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition

5. Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates

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3. Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates;Journal of Applied Physics;2019-06-14

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