Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates-Reference-Cited by-同舟云学术

Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates

Published:2019-06-14 Issue:22 Volume:125 Page:225704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tang Fengzai¹^ORCID,Zhu Tongtong¹^ORCID,Fu Wai-Yuan¹^ORCID,Oehler Fabrice¹^ORCID,Zhang Siyuan¹^ORCID,Griffiths James T.¹,Humphreys Colin¹,Martin Tomas L.²^ORCID,Bagot Paul A. J.²^ORCID,Moody Michael P.²,Patra Saroj Kanta³⁴^ORCID,Schulz Stefan⁴,Dawson Philip⁵^ORCID,Church Stephen⁵,Jacobs Janet⁵,Oliver Rachel A.¹^ORCID

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

2. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

3. Department of Electrical Engineering, University College Cork, Cork T12YN60, Ireland

4. Photonics Theory Group, Tyndall National Institute, Dyke Parade, Cork T12R5CP, Ireland

5. Photon Science Institute, School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom

Funder

Science Foundation Ireland

Engineering and Physical Sciences Research Council

FP7 Ideas: European Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5097411

Reference46 articles.

1. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

2. The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

3. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

4. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

5. Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography;Applied Physics Letters;2023-10-16

2. Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs;Journal of Luminescence;2023-05

3. Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects;Journal of Applied Physics;2022-12-21

4. Correlative atom probe tomography and optical spectroscopy: An original gateway to materials science and nanoscale physics;MRS Bulletin;2022-07

5. Indium gallium nitride quantum dots: consequence of random alloy fluctuations for polarization entangled photon emission;Materials for Quantum Technology;2020-12-30