Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs-Reference-Cited by-同舟云学术

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Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs

Published:2023-05 Issue: Volume:257 Page:119732
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Mickevičius J.^ORCID,Valkiūnaitė E.,Podlipskas Ž.,Nomeika K.,Nargelas S.,Tamulaitis G.,Chow Y.C.,Nakamura S.,Speck J.S.,Weisbuch C.,Aleksiejūnas R.

Funder

Simons Foundation

University of California Santa Barbara Solid State Lighting and Energy Electronics Center

Research Council of Lithuania

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference39 articles.

1. Characterization of semi-polar (20$$\overline{2}$$1) InGaN microLEDs

2. Excitation power dynamics of photoluminescence in InGaN∕GaN quantum wells with enhanced carrier localization

3. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

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