Effect of H2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. GaN: Processing, defects, and devices
2. Growth and characterization of freestanding GaN substrates
3. Bulk GaN crystals grown by HVPE
4. Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy
5. Crystal growth of GaN by ammonothermal method
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1. Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy;Journal of Applied Physics;2024-08-28
2. Thermodynamic analysis of oxide vapor phase epitaxy of GaN;Journal of Applied Physics;2023-08-28
3. Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method;Journal of Crystal Growth;2022-03
4. High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C;Applied Physics Express;2022-02-14
5. Absolute surface energies of oxygen-adsorbed GaN surfaces;Journal of Crystal Growth;2020-11
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