Absolute surface energies of oxygen-adsorbed GaN surfaces
Author:
Funder
Japan Society for the Promotion of Science
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3;Imade;J. Cryst. Growth,2010
2. Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3;Bu;J. Cryst. Growth,2011
3. Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3;Imade;J. Cryst. Growth,2012
4. Effect of H2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3;Bu;J. Cryst. Growth,2014
5. Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas;Sumi;Jpn. J. Appl. Phys.,2015
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