Absolute surface energies of oxygen-adsorbed GaN surfaces-Reference-Cited by-同舟云学术

Absolute surface energies of oxygen-adsorbed GaN surfaces

Published:2020-11 Issue: Volume:549 Page:125868
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kawamura Takahiro^ORCID,Akiyama Toru,Kitamoto Akira,Imanishi Masayuki^ORCID,Yoshimura Masashi,Mori Yusuke,Morikawa Yoshitada,Kangawa Yoshihiro^ORCID,Kakimoto Koichi^ORCID

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3;Imade;J. Cryst. Growth,2010

2. Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3;Bu;J. Cryst. Growth,2011

3. Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3;Imade;J. Cryst. Growth,2012

4. Effect of H2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3;Bu;J. Cryst. Growth,2014

5. Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas;Sumi;Jpn. J. Appl. Phys.,2015

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