Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3-Reference-Cited by-同舟云学术

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Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3

Published:2010-02 Issue:5 Volume:312 Page:676-679
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Imade Mamoru,Kishimoto Hiroki,Kawamura Fumio,Yoshimura Masashi,Kitaoka Yasuo,Sasaki Takatomo,Mori Yusuke

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

3. Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers

4. Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

5. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

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1. Origin of Black Color in Heavily Doped n‐Type GaN Crystal;physica status solidi (b);2024-03-16

2. Elastic constants of GaN grown by the oxide vapor phase epitaxy method;Applied Physics Express;2023-12-26

3. Thermodynamic analysis of oxide vapor phase epitaxy of GaN;Journal of Applied Physics;2023-08-28

4. High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus;Inorganic Chemistry;2023-03-16

5. Suboxide vapor phase epitaxy for growth of high-purity gallium oxide;Japanese Journal of Applied Physics;2023-03-15

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