Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3-Reference-Cited by-同舟云学术

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Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3

Published:2011-07 Issue:1 Volume:327 Page:89-93
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bu Yuan,Imade Mamoru,Kishimoto Hiroki,Yoshimura Masashi,Sasaki Takatomo,Kitaoka Yasuo,Isemura Masashi,Mori Yusuke

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. GaN: Processing, defects, and devices

2. Growth and characterization of freestanding GaN substrates

3. Bulk GaN crystals grown by HVPE

4. Crystal growth of GaN by ammonothermal method

5. Preparation of GaN Single Crystals Using a Na Flux

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C;Applied Physics Express;2022-02-14

2. Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy;Japanese Journal of Applied Physics;2021-08-27

3. Absolute surface energies of oxygen-adsorbed GaN surfaces;Journal of Crystal Growth;2020-11

4. Growth of GaN layers using Ga2O vapor synthesized from Ga2O3 and carbon;Journal of Crystal Growth;2020-04

5. Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method;Japanese Journal of Applied Physics;2019-05-22

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