1. Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. S. Nakamura, InGaN/GaN/AlGaN-based laser diodes with a lifetime of 10,000 hours, The Third European Gallium Nitride Workshop, Warsaw, Poland, June 1998.
4. S. Porowski, J. Jun, M. Bockowski, M. Leszczynski, S. Krukowski, M. Wróblewski, B. Lucznik, I. Grzegory, III–V nitrides—conditions for crystal growth at high N2 pressure, in: M. Godlewski (Ed.), Proceedings of the Eighth Conference on Semi-insulating III–V Materials, World Scientific, Singapore, 1994, p. 61.