Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab12c8/pdf
Reference30 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. Recent progress of GaN power devices for automotive applications
3. Current status of GaN power devices
4. The electrical properties of bulk GaN crystals grown by HVPE
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3. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate;Journal of Crystal Growth;2024-02
4. Elastic constants of GaN grown by the oxide vapor phase epitaxy method;Applied Physics Express;2023-12-26
5. Thermodynamic analysis of oxide vapor phase epitaxy of GaN;Journal of Applied Physics;2023-08-28
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