Current status of GaN power devices
Author:
Affiliation:
1. TOYOTA Central R&D Labs., Inc.
2. Japan Science and Technology Agency (JST), CREST
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/10/21/10_10.20132005/_pdf
Reference33 articles.
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2. [2] COMPOUND SEMICONDUCTOR 19 [2] (2013) 35.
3. [3] R. Vetury, N.-Q. Zhang, S. Keller and U. K. Mishra: IEEE Trans. Electron Devices 48 [3] (2001) 560.
4. [4] A. F. Anwar, S. S. Islam and R. T. Webster: Appl. Phys. Lett. 84 [11] (2004) 1970.
5. [5] W. Saito, Y. Kakiuchi, T. Nitta, Y. Saito, T. Noda, H. Fujimoto, A. Yoshioka, T. Ohno and M. Yamaguchi: IEEE Electron Device Lett. 31 (2010) 659.
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