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Prediction of overshoot and crosstalk of low‐voltage GaN HEMT using analytical model

  • Published:2022-05-12 Issue:13 Volume:15 Page:1295-1321
  • ISSN:1755-4535
  • Container-title:IET Power Electronics
  • language:en
  • Short-container-title:IET Power Electronics

Author:

Wu Yingzhe1ORCID,Yin Shan23ORCID,Dong Minghai2,Jin Shoudong4,Li Hui2,Cheng Yuhua1,See Kye Yak5

Affiliation:

1. School of Automation Engineering University of Electronic Science and Technology of China Chengdu China

2. School of Aeronautics & Astronautics University of Electronic Science and Technology of China Chengdu China

3. Innoscience (Shenzhen) Semiconductor Co., Ltd. Shenzhen China

4. Innoscience (Zhuhai) Techonolgy Co., Ltd. Zhuhai China

5. School of Electrical and Electronic Engineering Nanyang Technological University Singapore Singapore

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

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