Yellow luminescence and carrier distribution due to polarity-dependent incorporation of carbon impurities in bulk GaN by Na flux

Author:

Si ZhiweiORCID,Liu Zongliang,Zheng Shunan,Dong Xiaoming,Gao Xiaodong,Wang Jianfeng,Xu Ke

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference67 articles.

1. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI);Amano;Jpn. J. Appl. Phys.,1989

2. High-power GaN P-N junction blue-light-emitting diodes;Nakamura;Jpn. J. Appl. Phys.,1991

3. InGaN-based multi-quantum-well-structure laser diodes;Nakamura;Jpn. J. Appl. Phys.,1996

4. Demonstration of blue and green GaN-based vertical-cavity surface-emitting lasers by current injection at room temperature;Kasahara;APEX,2011

5. Current status of GaN power devices;Kachi;IEICE Electron. Express,2013

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