The electrical properties of bulk GaN crystals grown by HVPE-Reference-Cited by-同舟云学术

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The electrical properties of bulk GaN crystals grown by HVPE

Published:2016-02 Issue: Volume:436 Page:76-81
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gu Hong,Ren Guoqiang,Zhou Taofei,Tian Feifei,Xu Yu,Zhang Yumin,Wang Mingyue,Wang Jianfeng,Xu Ke

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

National Basic Research Program of China

STS-Network Plan, CAS

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy

2. High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

3. Optical and electrical properties of dislocations in plastically deformed GaN

4. Electrical characterization of GaN p-n junctions with and without threading dislocations

5. Growth model for GaN with comparison to structural, optical, and electrical properties

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates;Advanced Science;2024-09-03

2. Analysis of Subsurface Damage Structures of Gallium Nitride Substrates Induced by Mechanical Polishing with Diamond Abrasives;physica status solidi (b);2024-07-04

3. Recent progress on the vertical GaN power transistor and its integrated circuit;Chinese Science Bulletin;2022-09-01

4. Evolution of V-pits in the ammonothermal growth of GaN on HVPE-GaN seeds;CrystEngComm;2022

5. Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review;Journal of Electronic Materials;2021-09-30

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