Growth and characterization of freestanding GaN substrates-Reference-Cited by-同舟云学术

Growth and characterization of freestanding GaN substrates

Published:2002-04 Issue: Volume:237-239 Page:912-921
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Motoki Kensaku,Okahisa Takuji,Nakahata Seiji,Matsumoto Naoki,Kimura Hiroya,Kasai Hitoshi,Takemoto Kikurou,Uematsu Koji,Ueno Masaki,Kumagai Yoshinao,Koukitu Akinori,Seki Hisashi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. GaN Growth Using GaN Buffer Layer

3. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

4. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

5. Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

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