Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method-Reference-Cited by-同舟云学术

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Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method

Published:2022-03 Issue: Volume:581 Page:126495
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shimizu Ayumu,Kitamoto Akira,Kamiyama Masahiro,Tsuno Shintaro,Ishibashi Keiju,Usami Shigeyoshi,Imanishi Masayuki,Maruyama Mihoko,Yoshimura Masashi,Sumi Tomoaki,Takino Junichi,Okayama Yoshio,Hata Masahiko,Isemura Masashi,Mori Yusuke

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Prospects for LED lighting

3. Recent progress of GaN power devices for automotive applications

4. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

5. The 2018 GaN power electronics roadmap

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermodynamic analysis of oxide vapor phase epitaxy of GaN;Journal of Applied Physics;2023-08-28

2. High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C;Applied Physics Express;2022-02-14

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