Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy

Published:2011-04-21 Issue:7-8 Volume:8 Page:2110-2112
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Yoshida Takehiro,Oshima Yuichi,Watanabe Kazutoshi,Tsuchiya Tadayoshi,Mishima Tomoyoshi

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy;Journal of Applied Physics;2024-08-28

2. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals;Applied Physics Letters;2024-06-03

3. Growth of bulk GaN crystals for the production of substrates;Reference Module in Materials Science and Materials Engineering;2024

4. Thermodynamic analysis of oxide vapor phase epitaxy of GaN;Journal of Applied Physics;2023-08-28

5. Prospective view of nitride material synthesis;International Journal of Ceramic Engineering & Science;2023-07-27

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