Dislocation classification of a large-area β-Ga2O3 single crystal via contrast analysis of affine-transformed X-ray topographs-Reference-Cited by-同舟云学术

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Dislocation classification of a large-area β-Ga2O3 single crystal via contrast analysis of affine-transformed X-ray topographs

Published:2020-10 Issue: Volume:548 Page:125825
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yao Yongzhao,Ishikawa Yukari,Sugawara Yoshihiro

Funder

JSPS KAKENHI, Japan,

Nippon Sheet Glass Foundation for Materials Science and Engineering

NAGAI Foundation for Science & Technology, Japan

KEK-PF, Japan,

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Experimental electronic structure of In2O3and Ga2O3

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS

4. A review of Ga2O3materials, processing, and devices

5. Recent progress in Ga2O3power devices

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of bulk β-Ga2O3 single crystals;Reference Module in Materials Science and Materials Engineering;2023

2. Large-area total-thickness imaging and Burgers vector analysis of dislocations in β-Ga₂O₃ using bright-field x-ray topography based on anomalous transmission;Applied Physics Letters;2022-07-04

3. Observation of dislocations in thick β-Ga₂O₃ single-crystal substrates using Borrmann effect synchrotron x-ray topography;APL Materials;2022-05-01

4. Wet etching in β-Ga2O3 bulk single crystals;CrystEngComm;2022

5. The inclination of threading dislocation in chemical vapor deposition-grown single-crystal diamond analyzed by synchrotron white beam X-ray topography;Journal of the Korean Physical Society;2022-01

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