Experimental electronic structure of In2O3and Ga2O3-Reference-Cited by-同舟云学术

Experimental electronic structure of In2O3and Ga2O3

Published:2011-08-16 Issue:8 Volume:13 Page:085014
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Janowitz Christoph,Scherer Valentina,Mohamed Mansour,Krapf Alica,Dwelk Helmut,Manzke Recardo,Galazka Zbigniew,Uecker Reinhard,Irmscher Klaus,Fornari Roberto,Michling Marcel,Schmeißer Dieter,Weber Justin R,Varley Joel B,Walle Chris G Van de

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference17 articles.

1. Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

2. Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)

3. Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

4. Bridgman-grown zinc oxide single crystals

5. Czochralski growth and characterization of β-Ga2O3 single crystals

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