Czochralski growth and characterization of β-Ga2O3 single crystals-Reference-Cited by-同舟云学术

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Czochralski growth and characterization of β-Ga2O3 single crystals

Published:2010-08-26 Issue:12 Volume:45 Page:1229-1236
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Galazka Z.,Uecker R.,Irmscher K.,Albrecht M.,Klimm D.,Pietsch M.,Brützam M.,Bertram R.,Ganschow S.,Fornari R.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference38 articles.

1. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

2. Fabrication of hexagonal GaN on the surface of β-Ga2O3 single crystal by nitridation with NH3

3. Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications

4. Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

5. Manganese-activated gallium oxide electroluminescent phosphor thin films prepared using various deposition methods

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1. Unveiling the orientation growth mechanism and solar-blind response performance of β-Ga2O3 (100) film on SiC substrate with AlN buffer layer;Journal of Materials Science & Technology;2025-03

2. The study of (1¯01) plane in β-Ga2O3 crystal;Applied Surface Science;2024-12

3. Etching of Ga₂O₃: an important process for device manufacturing;Journal of Physics D: Applied Physics;2024-09-12

4. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

5. Resistive and ballistic phonon transport in β - Ga2O3;Physical Review B;2024-08-14

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