Wet etching in β-Ga2O3 bulk single crystals-Reference-Cited by-同舟云学术

Wet etching in β-Ga2O3 bulk single crystals

Published:2022 Issue:6 Volume:24 Page:1127-1144
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Jin Zhu¹^ORCID,Liu Yingying¹^ORCID,Xia Ning¹^ORCID,Guo Xiangwei¹^ORCID,Hong Zijian²^ORCID,Zhang Hui¹³^ORCID,Yang Deren¹³^ORCID

Affiliation:

1. Institute of Advanced Semiconductors, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China

2. Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China

3. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China

Abstract

Wet etching is a simple and effective method to identify defects, fabricate patterns, and polish wafers of semiconductors. We highlight recent progress in wet etching of β-Ga2O3 substrates with an aim to comprehensively understand the etching behavior and mechanism.

Funder

National Natural Science Foundation of China

National Program for Support of Top-notch Young Professionals

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D1CE01499D

Reference124 articles.

1. On the chemical and spectroscopic characters of a new metal (gallium)