Critical layer thickness of MOVPE-grown GaAs on InxGa1−xAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE;Physica E: Low-dimensional Systems and Nanostructures;2014-02
2. Dissociated V-shaped dislocation model for the relaxation of strained single heterostructures;Materials Science and Engineering: B;1998-03
3. Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy;Journal of Crystal Growth;1997-01
4. Misfit dislocation formation in lattice-mismatched III - V heterostructures grown by metal - organic vapour phase epitaxy;Journal of Physics D: Applied Physics;1996-12-14
5. Dependence of indium incorporation upon the substrate misorientation during growth of In x Ga 1 − x As by metalorganic vapour phase epitaxy;Journal of Crystal Growth;1996-10
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