Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. The Use of Metal-Organics in the Preparation of Semiconductor Materials
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1. Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy;Semiconductors;2018-07-06
2. Impact of the substrate misorientation and its preliminary etching on the structural and optical properties of integrated GaAs/Si MOCVD heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2018-03
3. Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures;Physica B: Condensed Matter;2018-02
4. Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100);Semiconductors;2018-01
5. Modification of strain relaxation process by Si doping in metamorphic Al(Ga)InAs layers grown on GaAs;Materials Express;2016-12-01
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