Modification of strain relaxation process by Si doping in metamorphic Al(Ga)InAs layers grown on GaAs
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Published:2016-12-01
Issue:6
Volume:6
Page:521-526
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ISSN:2158-5849
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Container-title:Materials Express
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language:en
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Short-container-title:mat express
Author:
He Yang,Sun Yurun,Zhao Yongming,Yu Shuzhen,Dong Jianrong
Publisher
American Scientific Publishers
Subject
General Materials Science