Energy band‐gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332252
Reference24 articles.
1. Defects in epitaxial multilayers
2. Use of misfit strain to remove dislocations from epitaxial thin films
3. Misfit dislocation‐free In1−xGaxAs1−yPy/InP heterostructure wafers grown by liquid phase epitaxy
4. Asymmetric Cracking in III–V Compounds
5. Crack formation in InP‐GaxIn1−xAs‐InP double‐heterostructure fabrication
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