Misfit dislocation‐free In1−xGaxAs1−yPy/InP heterostructure wafers grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329333
Reference10 articles.
1. Lattice deformations and misfit dislocations in GaInAsP/InP double‐heterostructure layers
2. On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates
3. LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InP
4. Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates
5. Composition dependence of the band gaps of In1−xGaxAs1−yPyquaternary solids lattice matched on InP substrates
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3. Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy;Semiconductors;2019-11
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