Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/1135/i=1/a=012076/pdf
Reference13 articles.
1. Band parameters for III–V compound semiconductors and their alloys
2. Electronic and structural properties of the pentanary alloy GaxIn1−xPySbzAs1−y−z
3. Effect of GaInP intermediate barrier in 1.3μm compressive-strained GaInAsP/GaInAsP multiple-quantum-wells laser diodes
4. Threshold currents of 1.55 μm InGaAs/InGaAsP multiple quantum well laser diodes
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Role of threading dislocations on the growth of HgCdTe epilayers investigated using monochromatic X-ray Bragg diffraction imaging;Journal of Synchrotron Radiation;2021-01-01
2. Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy;Semiconductors;2019-11
3. Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates;Technical Physics Letters;2019-10
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