Effect of mismatch strain on band gap in III‐V semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334817
Reference23 articles.
1. Ga0.47In0.53As/Al0.48In0.52As multiquantum-well LEDs emitting at 1.6 μm
2. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
3. Abrupt transitions in composition and doping profile in GaAs–Ga1−xAlxAs heterostructures by atmospheric pressure MOVPE
4. Electron mobilities in In0.2Ga0.8As/GaAs strained‐layer superlattices
5. Mismatch and electron mobility in MBE GaxIn1?xas epitaxial layers on InP substrates
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