1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93786
Reference9 articles.
1. Molecular-beam epitaxially grown 1.3 μm GaInAsP/InP double-heterostructure lasers
2. Molecular‐beam epitaxial growth of uniform Ga0.47In0.53As with a rotating sample holder
3. Beryllium doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular‐beam epitaxy
4. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP
5. Optically pumped 1.55‐μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy
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2. Lattice-Dynamical, Elastic and Thermo-Dynamical Properties of GaAs, InAs, and their Mixed Ga1-xInxAs Alloys;Journal of Electronic Materials;2022-03-14
3. Wave-function engineering in In0.53Ga0.47As/InxAl1−xAs core/shell nanowires;2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2021-09-13
4. InGaAs/InAlAs quantum well structures grown on GaAs (001) substrate by molecular beam epitaxy;Journal of Physics: Conference Series;2021-05-01
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