InGaAs/InAlAs quantum well structures grown on GaAs (001) substrate by molecular beam epitaxy

Abstract

Abstract A 100 periods In0.53Ga0.47As/In0.52Al0.48As quantum well structure was grown by molecular beam epitaxy (MBE) on GaAs (001) substrate. The XRD results of ternary alloy InGaAs and InAlAs films show that the indium component is similar to the designed structure. In addition, the XRD results show that the In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structure is consistent with the designed structure. The PL spectrum of In0.52Ga0.48As/In0.53Al0.47As quantum well structures is ∼1470 nm at room temperature.