Optical properties of high‐quality InGaAs/InAlAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348540
Reference20 articles.
1. Optically pumped 1.55‐μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy
2. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
3. Long‐wavelength (1.0–1.6 μm)In0.52Al0.48As/ In0.53(GaxAl1−x)0.47As/In0.53Ga0.47As metal‐semiconductor‐metal photodetector
4. Modulation‐doped Ga0.47In0.53As/Al0.48In0.52As planar photoconductive detectors for 1.0–1.55‐μm applications
5. High-speed electrooptic phase modulators using InGaAs/InAlAs multiple quantum well waveguides
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1. Influence of Auger heating and Shockley-Read-Hall recombination on hot-carrier dynamics in InGaAs nanowires;Physical Review B;2024-06-20
2. Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots;Physical Review Materials;2022-11-30
3. Tunneling dynamics and transport in MBE-grown GaAs/AlGaAs asymmetric double quantum wells investigated via photoluminescence and terahertz time-domain spectroscopy;Journal of Materials Science: Materials in Electronics;2022-06-08
4. InGaAs/InAlAs quantum well structures grown on GaAs (001) substrate by molecular beam epitaxy;Journal of Physics: Conference Series;2021-05-01
5. Sensitivity analysis of the theoretical performance of semiconductor upconversion nanostructures;Journal of Applied Physics;2019-07-28
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