Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122582
Reference4 articles.
1. Ultra-high speed modulation-doped field-effect transistors: a tutorial review
2. High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAs
3. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
4. High-transconductance delta-doped InAs/AlSb HFETs with ultrathin silicon-doped InAs quantum well donor layer
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3. InGaAs/InAlAs quantum well structures grown on GaAs (001) substrate by molecular beam epitaxy;Journal of Physics: Conference Series;2021-05-01
4. Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs;Advances in Science, Technology and Engineering Systems Journal;2020
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