Analysis of Two-Dimensional Electron Gas Formation in InGaAs-Based HEMTs
Author:
Publisher
ASTES Journal
Subject
Management of Technology and Innovation,Physics and Astronomy (miscellaneous),Engineering (miscellaneous)
Link
https://www.astesj.com/publications/ASTESJ_050275.pdf
Reference19 articles.
1. Fathimulla, A., Abrahams, J., Loughran, T., Hier, H., 1988. High-performance InAlAs/InGaAs HEMTs and MESFETs. IEEE Electron Device Lett. 9 (7), 328 - 330. DOI: 10.1109/55.733
2. Behet, M., Van der Zanden, K., Borghs, G., 1998. Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications. Appl. Phys. Lett. 73, 2760. https://doi.org/10.1063/1.122582
3. Malmkvist, M., Wang, S., Grahn, J. V., 2008. Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for High-Frequency Applications. IEEE T. Electron Dev. 55 (1), 268 - 275, 2008. DOI: 10.1109/TED.2007.910613
4. Newson, D.J., Merrett, R.P., Ridley, B.K., 1991. Control of gate leakage in InAlAs/InGaAs HEMTs. Electron. Lett. 27 (17), 1592 - 1593. DOI: 10.1049/el:19910996
5. Rathi, S., Jogi, J., Gupta, M., Gupta, R.S., 2009. Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT. Microelectron. Reliab. 49 (12),1508-1514. doi.org/10.1016/j.microrel.2009.07.044
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