2DEG characteristics of InAlAs / InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics-Reference-Cited by-同舟云学术

2DEG characteristics of InAlAs / InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics

Published:2021-08-10 Issue:1 Volume:35 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Lenka Trupti Ranjan¹^ORCID,Singh Rajan¹^ORCID,Tripathy Susanta Kumar¹^ORCID,Goyal Vishal²^ORCID,Nguyen Truong Khang³⁴^ORCID,Nguyen Hieu Pham Trung⁵^ORCID

Affiliation:

1. Department of Electronics & Communication Engineering National Institute of Technology Silchar Silchar India

2. Department of Electronics and Communication Engineering GLA University Mathura India

3. Division of Computational Physics Institute for Computational Science, Ton Duc Thang University Ho Chi Minh city Vietnam

4. Faculty of Electrical and Electronics Engineering Ton Duc Thang University Ho Chi Minh city Vietnam

5. Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark New Jersey USA

Funder

University of Notre Dame

Ministry of Electronics and Information technology

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2941

Reference18 articles.

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3. Ultra‐High‐Speed Low‐Noise InP‐HEMT Technology;Shinohara K;IEEE MTT‐S Int Microwave Symp Dig,2006

4. High performance InP HEMT technology with multiple interconnect layers for advanced RF and mixed signal circuits;Ha W;IEEE Int Conf Indium Phosphide Relat Mater,2009

5. DealWR 39th International Conference on Infrared Millimeter and Terahertz waves (IRMMW‐THz) Tucson AZ 12014.

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