High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAs-Reference-Cited by-同舟云学术

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High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAs

Published:1996-07 Issue:7 Volume:17 Page:328-330
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gill D.M.,Kane B.C.,Svensson S.P.,Tu D.-W.,Uppal P.N.,Byer N.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/11030/00506357.pdf?arnumber=506357

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