Molecular‐beam epitaxial growth of uniform Ga0.47In0.53As with a rotating sample holder
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92819
Reference3 articles.
1. Growth of Ga y In1 − y As / InP Heterostructures by Molecular Beam Epitaxy
2. Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In‐Ga oven
3. Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro‐optic and microwave devices
Cited by 48 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Flux masking and thickness uniformity in molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11
2. The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy;Journal of Applied Physics;1990-04
3. Chapter 2 Characteristics of Two-Dimensional Electron Gas in III-V Compound Heterostructures Grown by MBE;Very High Speed Integrated Circuits: Heterostructure;1990
4. Molecular Beam Epitaxy;Materials Processing: Theory and Practices;1989
5. A Bird’s-Eye View on the Evolution of Semiconductor Superlattices and Quantum Wells;Electronic Structure of Semiconductor Heterojunctions;1988
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