Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In‐Ga oven
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328798
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1. Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications;Semiconductor Science and Technology;2020-08-17
2. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers;Materials;2019-05-17
3. Ferromagnetic (In,Ga,Mn)As films prepared by ion implantation and pulsed laser melting;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-03
4. Principles of Molecular Beam Epitaxy;Handbook of Crystal Growth;2015
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