Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al$_{2}$O$_{3}$/InP Heterostructures with Various Surface Orientations (001), (110), and (111)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/5/i=6/a=061202/pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Electrical Characterization of Gate Traps in FETs With Ge and III–V Channels;IEEE Transactions on Device and Materials Reliability;2013-12
3. Effects of Sulfur Passivation on GaSb Metal–Oxide–Semiconductor Capacitors with Neutralized and Unneutralized (NH4)2S Solutions of Varied Concentrations;Applied Physics Express;2013-05-01
4. Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces;Journal of Applied Physics;2013-04-07
5. High pressure sputtering as a viable technique for future high permittivity dielectric on III–V integration: GdOx on InP demonstration;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01
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