Effects of Sulfur Passivation on GaSb Metal–Oxide–Semiconductor Capacitors with Neutralized and Unneutralized (NH4)2S Solutions of Varied Concentrations-Reference-Cited by-同舟云学术

Effects of Sulfur Passivation on GaSb Metal–Oxide–Semiconductor Capacitors with Neutralized and Unneutralized (NH4)2S Solutions of Varied Concentrations

Published:2013-05-01 Issue:5 Volume:6 Page:056502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Zhao Lianfeng,Tan Zhen,Bai Rongxu,Cui Ning,Wang Jing,Xu Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=5/a=056502/pdf

Reference21 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition

3. Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

4. GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric

5. Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxidation related particles on GaSb (1 0 0) substrate surfaces;Journal of Crystal Growth;2022-03

2. Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700nm;Optics Express;2021-11-05

3. Antimony‐Rich GaAs x Sb 1− x Nanowires Passivated by Organic Sulfides for High‐Performance Transistors and Near‐Infrared Photodetectors;Advanced Optical Materials;2021-09-23

4. Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode;Materials Science in Semiconductor Processing;2021-08

5. Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si;IEEE Transactions on Electron Devices;2020-10