Antimony‐Rich GaAs x Sb 1− x Nanowires Passivated by Organic Sulfides for High‐Performance Transistors and Near‐Infrared Photodetectors-Reference-Cited by-同舟云学术

Antimony‐Rich GaAs x Sb 1− x Nanowires Passivated by Organic Sulfides for High‐Performance Transistors and Near‐Infrared Photodetectors

Published:2021-09-23 Issue:22 Volume:9 Page:2101289
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Wang Wei¹,Yip SenPo²,Meng You¹³,Wang Weijun¹,Wang Fei¹³,Bu Xiuming¹,Lai Zhengxun¹,Kang Xiaolin¹,Xie Pengshan¹,Quan Quan¹,Liu Chuntai⁴,Ho Johnny C.¹²³^ORCID

Affiliation:

1. Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 China

2. Institute for Materials Chemistry and Engineering Kyushu University Fukuoka 816‐8580 Japan

3. State Key Laboratory of Terahertz and Millimeter Waves City University of Hong Kong Kowloon Hong Kong SAR 999077 China

4. Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University) Ministry of Education Zhengzhou 450002 China

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202101289

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