Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode

Author:

Jang Junho,Song JaemanORCID,Lee Seung S.,Jeong Sangkwon,Lee Bong Jae,Kim SanghyeonORCID

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference47 articles.

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3. Indi- vidual defects in InAs/InGaAsSb/GaSb nanowire tunnel field–effect transistors operating below 60 mv/decade;Memisevic;Nano Lett.,2017

4. High hole mobility and low leakage thin-body (In)GaSb p-MOSFETs grown on high-bandgap AlGaSb;Kim;IEEE J. Electron. Dev. Soc.,2020

5. 10-nm fin-width InGaSb p-channel self-aligned Fin- FETs using antimonide-compatible digital etch;Lu,2017

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