Structural, Optical and Electrical Properties of Undoped, Doped LaPO4 and Cu/Sn-LaPO4/N-Si Type Schottky Barrier Diode
Author:
Funder
University Grant Commissions
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02366-x.pdf
Reference42 articles.
1. Chvála A, Marek J, Drobny J, Stuchlíkova L, Messina AA, Vinciguerra V, Donoval D (2022) Characterization and evaluation of current transport properties of power SiC Schottky diode. Mater Today Proc 53:285–288
2. Saglam M, Ayyildiz ENİSE, Gümüs A, Türüt A, Efeoglu H, Tüzemen S (1996) Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes. Appl Phys A 62(3):269–273
3. Prasad CV, Reddy MSP, Reddy VR, Chinho P (2018) Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer. Appl Surf Sci 427:670–677
4. Uma M, Rajagopal Reddy V, Janardhanam V, Choi C-J (2019) Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization. J Mater Sci Mater 30(20):18710–18719
5. Rishabh Raj, Himanshu Gupta, L. P. Purohit. (2022) Performance of RF sputtered V2O5 interface layer in p-type CdTe/Ag Schottky diode, Optical Materials, 126 112176
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3