The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345381
Reference15 articles.
1. Low‐loss multiple quantum well GaInAs/InP optical waveguides
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5. Investigation of the interface grading in III‐V heterostructures by double‐crystal diffractometry
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1. Strain study of GaAs/In x Ga 1−x As/GaAs structures grown by MOVPE;Surface and Coatings Technology;2016-06
2. Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE;Physica E: Low-dimensional Systems and Nanostructures;2014-02
3. The relationship between stress and photoluminescence of Cd0.96Zn0.04Te single crystal;Materials Science and Engineering: B;2007-09
4. Structural quality of pseudomorphic Zn0.5Cd0.5Se layers grown on an InGaAs or InP buffer layer on (0 0 1) InP substrates;Journal of Crystal Growth;1997-08
5. Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates;Semiconductors;1997-01
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